Atmospheric cold plasma jet coating and surface treatment

ABSTRACT

A system and method are described for depositing a material onto a receiving surface, where the material is formed by use of a plasma to modify a source material in-transit to the receiving surface. The system comprises a microwave generator electronics stage. The system further includes a microwave applicator stage including a cavity resonator structure. The cavity resonator structure includes an outer conductor, an inner conductor, and a resonator cavity interposed between the outer conductor and the inner conductor. The system also includes a multi-component flow assembly including a laminar flow nozzle providing a shield gas, a zonal flow nozzle providing a functional process gas, and a source material flow nozzle configured to deliver the source material. The source material flow nozzle and zonal flow nozzle facilitate a reaction between the source material and the functional process gas within a plasma region.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a non-provisional of U.S. Provisional ApplicationSer. No. 62/510,068, filed on May 23, 2017, entitled “ATMOSPHERIC COLDPLASMA JET COATING AND SURFACE TREATMENT FOR IMPROVED ADHESIVE BONDINGPERFORMANCE OR DISSIMILAR MATERIAL JOINTS SUBJECT TO HARSH ENVIRONMENTALEXPOSURE,” the contents of which are expressly incorporated herein byreference in their entirety, including any references therein.

TECHNICAL FIELD

The disclosure generally relates to thin-film deposition at atmosphericpressure using an electromagnetically-driven cold plasma source, andmore particularly to ultra-compact microwave plasma jet applicators withextended jet reach for hybrid cleaning/etching, plasma-enhanced chemicalvapor deposition, and normal/reactive sputter deposition for engineeredcoatings and surface treatment.

BACKGROUND OF THE INVENTION

Using air plasmas for surface degreasing and activation have beeneffective for treating bare substrates; however, the benefits of suchair plasma treatments expire after a few hours of ambient exposure.Functionalizing and then sealing the surface with a material coating,e.g. silane-based, alumina, yttria-stabilized zirconia, titaniumnitride, diamond-like carbon, etc., can provide desirable surfaceproperties, such as: corrosion/wear/impact resistance, lubricity,modified electrical/thermal transport properties, etc. Plasma-basedvacuum coating techniques have been used for decades in semiconductorfabrication, photovoltaics, display and web coating industries; however,for many industrial applications there is a need for thin-filmprocessing and deposition without vacuum chambers for in-field,in-factory and low-cost manufacturing.

Atmospheric pressure plasma systems based on dielectric-barrierdischarges, corona jets, RF parallel plates and gliding/rotating arcdischarges have been introduced for applications such as surfacemodification, surface cleaning and bacterial sterilization. A controlledrotating/gliding arc (e.g. PlasmaTreat, Relyon) operates at high powerlevels and can be combined with a precursor gas injection ring fordeposition. However, the gas temperature is very hot and turbulent toavoid arc heating in one location. Thus, a plasma zone is only present afew mm away from the nozzle head when using a precursor gas injectionapproach for forming surface coatings. Moreover, multiple plasmagenerators are required for surface cleaning prior to coating—resultingin a bulky system suited best for flat, linear parts.

Non-equilibrium cold plasma atmospheric pressure plasma jets (e.g.Apjet, Surfx) run at 13.56 MHz excitation frequency. Such systems arequasi-continuous and have near-room temperature plasma jet energies.These systems are costly and require kW-level power supplies,electro-mechanical RF impedance matching circuits and tuning controllerswith active water jacket cooling using chillers. The stability anduniformity of a radio-frequency discharge is limited by a critical powerdensity beyond which the plasma becomes unstable leading to runawayarcing and debris generation. Adding larger molecular weight precursorspecies and reactive gas chemistries requires more power to strike andmaintain the plasma reaching this limit sooner.

An alternative is the basic dielectric barrier discharge (DBD) that islimited in achievable power density spread over large flat plates.Companies, such as PSM Korea, tried to use this technique for large areacleaning and surface activation. Subsequent improvements of the basicDBD hybridized the original technique with a point-like encapsulatedelectrode to lower the required voltage for breakdown and added localgas flow to extend a plasma jet several cm to enable treatinghard-to-reach surfaces to be treated.

SUMMARY OF THE INVENTION

The limitations of the above-summarized prior known approaches include:limited power-density, uniformity of gas flow (for multiple precursorsand carrier gases), difficult depositing more than one type of material,non-uniformity in material deposition, arcing and debris generation,areal device scaling, and limitations in the plasma jet reach haveforced end-users to compromise with multiple tool sets for use on flatsubstrates. Furthermore, these systems operate with separate sourceheads and power boxes to deliver high-voltage and RF energy over largeumbilical cables that pose a challenge for the in-field/in-factorymanufacturing environment. There are limited options for 3D-printedcomplex shape components, mixed material joining, high-precisionaerospace components and specialty substrates.

An alternative approach is described herein with reference to thedrawings to the ones described above. The alternative approach usesmicrowave power to drive the plasma with power density scalability, andthe microwave power is coupled to gas discharge structures that combinegas from multiple sources with controlled gas flow environments todeliver a high-quality plasma jet to substrates.

In particular, a system is described herein for depositing a materialonto a receiving surface, where the material is formed by use of aplasma to modify a source material in-transit to the receiving surface.The system comprises a microwave generator electronics stage. The systemfurther includes a microwave applicator stage including a cavityresonator structure, wherein the cavity resonator structure comprises:an outer conductor, an inner conductor, and a resonator cavityinterposed between the outer conductor and the inner conductor. Thesystem also includes a multi-component flow assembly comprising: alaminar flow nozzle providing a shield gas, a zonal flow nozzleproviding a functional process gas, and a source material flow nozzleconfigured to deliver the source material. Moreover, the source materialflow nozzle and zonal flow nozzle are physically configured tofacilitate a reaction between the source material and the functionalprocess gas within a plasma region generated by the microwave generatorelectronics stage and the microwave applicator stage. Additionally, theplasma region is between an outlet of the source material flow nozzleand the receiving surface, and the laminar flow nozzle is configured toflow the shield gas so as to effectively isolate the functional processgas and the source material in the plasma region.

A method is further described herein for depositing a material on areceiving surface of a target material, where the material is formed byuse of a plasma to modify a source material in-transit to the receivingsurface. The method includes applying a shield gas flow that operates toachieve a clearing of the receiving surface of debris. The methodfurther includes first applying a process/carrier gas flow, after theclearing, that operates to achieve a treating of the receiving surface,wherein the treating is taken from the group consisting of: cleaning thereceiving surface and functionalizing the receiving surface. The methodfurthermore includes applying a centerline flow, after the treating,that operates to achieve an applying the material to the receivingsurface. Moreover, during operation of the method, a cold plasma issuperimposed on the process/carrier gas flow and the centerline flow toform a cold plasma jet.

Additional features and advantages of the invention will be madeapparent from the following detailed description of illustrativeexamples that proceeds with reference to the accompanying figures.

BRIEF DESCRIPTION OF THE DRAWINGS

While the appended claims set forth the features of the presentinvention with particularity, the invention, together with its objectsand advantages, may be best understood from the following detaileddescription taken in conjunction with the accompanying drawings ofwhich:

FIG. 1 is an overview illustration of a microwave cold plasmaatmospheric pressure material treatment and coating system incorporatingfeatures of the invention;

FIG. 2 is a functional block diagram of subsystems including optionalelements;

FIG. 3 is a schematic drawing of a system identifying key elementsincluding annular shield gas flow;

FIG. 4A depicts a cross-sectional view of the microwave plasmaapplicator, including coaxial conductor elements, hermetic insulatorbreak and laminar carrier gas injection;

FIG. 4B depicts a cross-sectional view of the microwave plasmaapplicator with centerline gas injection through the central electrode;

FIG. 4C depicts microwave electromagnetic energy injection into theapplicator with wave energy going into cutoff condition in front of thecenterline gas injection location;

FIG. 4D depicts the intense electric field at the cutoff location andgeneration of carrier gas plasma for breakdown and sustainment of highdensity electrons, ions, excited states and radicals;

FIG. 4E depicts the combination of microwave plasma generation andcenterline precursor injection;

FIG. 4F depicts the application of negative DC pulsing on a centralelectrode to attract ions from the local plasma;

FIG. 4G depicts the physical sputtering of material off a centralelectrode from the application of pulsed −DC biasing to generate atomflux of the material towards the substrate;

FIG. 4H depicts the application of a positive bias pulse (a.k.a. KickPulse) to elevate local plasma potential positive with respect to thesubstrate to supply ion energy to the substrate.

FIG. 5 is an illustrative waveform showing the application of a largenegative sputtering pulse that is immediately followed by a positivekick pulse providing ions sufficient energy to interact with thesubstrate;

FIG. 6A depicts an insulating insert into central electrode in themicrowave applicator housing a material feed;

FIG. 6B depicts the insulating insert with large areal hole for bothcenterline gas flow and sputtering material;

FIG. 6C depicts an example of a multi-mode insulating insert into thecentral electrode in the microwave applicator allowing a mix of gasintroduction and sputtering feedstocks;

FIG. 7 depicts a cross-sectional view of one type of laminar flow gasmanifold and distribution system consisting of N small diameter tubes inparallel configuration;

FIG. 8 is an illustration of steps for surface cleaning and hybridthin-film deposition using the microwave plasma applicator using amixture of precursor chemistries and sputtered materials for gradedcoatings and bonding;

FIG. 9 is an illustration of frequency tuning for impedance matchingunder variable conductivity plasma loads;

FIG. 10 depicts a cross-sectional view of microwave absorber materiallocated near the coaxial applicator exit to minimize or preventelectromagnetic energy leakage;

FIG. 11A is a side profile illustration depicting the operation of thecold-plasma jet and deposition system traveling across a substrate to betreated;

FIG. 11B is an illustration showing the zonal gas flow through theplasma formation region leading to distinct, individual plasmachemistry, radical and ion regimes at the substrate;

FIG. 11C is a top down view of the distinct, individual plasma chemistryand gas flow regions impinging on the substrate for isolation ofexternal contaminants, localized plasma cleaning and reactive chemistry,and precursor/sputter material coating zones while plasma jet istraveling;

FIG. 12 is an illustration of a planar version of the cold-plasma jetapplicator for wide-area treatment; and

FIG. 13 is an illustration of the cold-plasma jet applicator andgenerator integrated onto a robotic arm for local materials treatmentfor in-line manufacturing.

DETAILED DESCRIPTION OF THE DRAWINGS

The detailed description of the figures that follows is not to be takenin a limiting sense but is made merely for the purpose of describing theprinciples of the described embodiments.

An integrated microwave-driven high-pressure plasma source system isdescribed for materials processing. The illustrative system includes asmall plasma launcher assembly attached to a coaxial power feed that canbe easily mounted onto a robotic arm for in-line surface treatment andlocalized plasma cleaning, coating and activation. The microwaveatmospheric-pressure cold-plasma jet delivers energetic species (ions,electrons, radicals), electric fields, UV light and precursors (e.g.metallo-organic chemicals, aerosols, nanoparticle suspensions, etc.) tosurfaces without high temperatures that may degrade bulk materialproperties. The term precursor contemplates a wide variety of materialswithout limitation to the examples provided herein. Using a miniaturecoaxial head for laminar precursor injection, combined with in-situmicrowave generation using GaN high electron mobilitytransistors—suitable for mounting on a robot arm, an extended plasma jetcan reach into channels, grooves and complex joints for localizedcleaning, surface functionalization and material coating.

Turning to FIG. 1 , schematic cross-section provides an overviewillustrative depiction of a cold-plasma jet system incorporatingfeatures of the disclosed system. A microwave plasma applicator 1contains an outer conductor electrode 10 and an inner propagation of anelectromagnetic energy 60 fed through a microwave feedthrough 40. Theconfiguration (coaxial or planar) of the cavity resonator structure 4,which is described further herein, eliminates the need for bulkywaveguides at lower microwave frequencies, i.e. 500 MHz to 5 GHz, forthe propagation of transverse electromagnetic (TEM) modes. Designing thecavity structure 4 to enter an electromagnetic cutoff condition at ahigh field region 61 facilitates generating localized intense electricfields for producing a plasma (e.g. non-thermal electrons) andsubsequent dissociation, ionization and radicalization of a material inthe high field region 61. The use of microwave energy enables high powerdensities to be achieved in a small size, e.g. cm-length scales.Generated electrons are driven by the microwave energy 60 to dissociateand ionize precursor molecules and/or atoms introduced into the flowstream, and to generate radicals and metastable atoms and molecules forpropagation downstream into a cold plasma jet 9 (within the region ofthe dotted arch outline).

The plasma jet 9 is stabilized and extended to a substrate 8 surface bya zonal streamline (laminar) flow field separated into three parts: acenterline flow 51, a process/carrier gas flow 31, and an outer shieldgas flow 11. The outer shield gas flow 11 serves to prevent contaminants6, e.g. water, external oils and vapors, from entraining into the coldplasma jet 9 and a plasma chemistry/reaction region including, forexample, a zone 300 primarily occupied by a source material and a zone301 primarily occupied by the process/carrier gas on or near thesubstrate 8 surface. The outer shield gas flow 11 is introduced throughthe laminar flow manifold 12 housed in or near the outer conductorelectrode 10. The processing/carrier gas flow 31 is introduced through azonal flow system 30 that parallelizes the processing/carrier gas flowfor introduction into the cavity resonator structure 4. The parallelizedprocessing/carrier gas flow is directed by the zonal flow system 30towards the substrate 8 at sufficient velocity to transport theprocess/carrier gas through a plasma generation zone 70 near the highfield region 61 and continue onward to the substrate 8 to be treated bythe gas flow combination.

In accordance with illustrative examples, the zonal flow system 30 is anenabler for extending a reach of the cold plasma jet 9 toward tosubstrate 8 surface. The zonal flow system 30 operation is furtherconfigured/tuned to control the precise composition of the thin-filmdeposition at the zone 300 and process gas chemistry at the zone 301proximate the substrate 8 surface. The centerline flow 51 is injecteddirectly through a hollow passageway within the inner conductingelectrode 20 or through an intermediary dielectric 50 that serves toisolate precursor gases, carrier gases or sputter material feedstocksprovided at a feedstock 53. The inner conductor electrode 20 and theouter conductor electrode 10 may be surrounded with a dielectricmaterial 5 for electric potential isolation of the cold plasma jet 9from the microwave plasma applicator 1. This physical/electricalarrangement facilitates application of a first potential 90 and/or asecond potential 91 to be applied to the system for actively biasing theplasma or sputtering material from the feedstock 53 for injection intothe plasma jet 9 flowstream to the substrate 8.

A thin-film coating 7 is deposited onto the substrate 8 through thedirect plasma deposition in the zone 300 and interaction with a reactiveplasma chemistry in the zone 301 in the outer region of the plasma jet9. Reactive deposition forming nitrides, oxides, carbines, borides, andfluorides in the thin-film coating 7 can be achieved with this method.The generated plasma radicals and ions facilitate direct deposition inthe zone 300 and transformation of materials at the substrate 8 surfacein the zone 301. The shield gas in the outer shield gas flow 11, whichencounters the substrate 8 surface at a zone 302, inhibits contaminants6 from flowing into a zone 303 where the plasma jet 9 impinges thesubstrate 8 surface. The microwave plasma applicator 1 is flexible fordifferent combinations of precursor, process gas and carrier gasinjection, such as feeding precursor materials through the zonal flowsystem 30 for deposition over a larger area and entrain with differentgas-phase chemistries in the process/carrier gas flow 31 and thecenterline flow 51 for the plasma jet 9.

Turning to FIG. 2 , a functional block diagram is depicted thathighlights subsystems for the microwave plasma applicator 1, a microwavegenerator 2 and the thin-film and a processing recipe management 200.The microwave plasma applicator 1 includes the cavity resonatorstructure 4, which is typically coaxial or planar, and the microwavefeedthrough 40, which is typically hermetic metal-ceramic with tailoreddimensions and permittivity for impedance matching from the microwavegenerator 2 to the cavity resonator structure 4 for efficient inputcoupling to produce the electromagnetic (microwave) energy 60. Themicrowave plasma applicator 1 also contains the zonal flow system 30 forinjection of process/carrier gas. The zonal flow system 30 is made, forexample, of an array of capillary tubes having a largelength-to-diameter ratio to parallelize the flow of the process/carriergas flow 31 injected into the cavity resonator structure 4. Centerlineflow precursor or sputtered material can be injected through a passagewithin the intermediary dielectric 50. A shield gas nozzle 3 may beadded for protection against debris, contaminants, and/or unwanted waterand other vapor.

The microwave generator (including power delivery structures) 2 may beattached directly to the microwave plasma applicator 1 or, alternativelylocated some distance away from the microwave plasma applicator 1. Usinga solid-state power amplifier 100, the microwave components can bedirectly integrated into the system for compactness, elimination ofextraneous cabling and safety, or they can be supplied externally over acoaxial feed. An impedance measurement and microwave frequency control101 facilitates maintaining/tuning plasma strike, plasma sustain, powerdelivery and adaptive control over changing load conditions. Containedwithin the microwave generator 2 are a control electronics 102 thatfacilitate communication to the outside world, maintenance and operationof the system.

Optional high-voltage generator biasing at the first potential 90 and/orthe second potential 91 are included for pulsing.

Substrate 8 surface cleaning, oxidation and removal of materials, andthin-film deposition and chemistry are handled with the processingrecipe management 200. The processing recipe management 200 systemcontrols a shield gas mass flow 15, a process/carrier gas mass flow 35,a precursor mass flow 55, the introduction of any sputtering feedstock53, as well as the pulsed modulation of the microwave generator 201. Theprocessing recipe management 200 system also coordinates with externalparameters such as substrate 8 movement, positioning with robotic arms,sequencing, etc.

Notable aspects of the above-described system (and associated operation)include low direct current (DC) voltage usage for end-user for safety,an integrated microwave generator in plasma source head, long laminarjet flow with precursor injection or pulsed DC sputtering on thecenterline for downstream mixing, and higher-frequency operation forstability and power delivery, including pulsed microwaves. The coaxialnature of the power feed facilitates precursor injection into the shieldgas flow, thereby eliminating a need for a separate gas collar. Thecoaxial power feed structure maintains the jet-like nature of themicrowave fed discharge to allow local plasma (ions, electrons,radicals, etc) to penetrate complex part features for surfacemodification. The laminar flow stream can be improved with multiplechannel sets for both the centerline precursor and shield gas willextend the jet further. The advantage of this approach is that all themicrowave electronics can be integrated into the plasma source head thatwill mount to the robot arm so that <300V is fed into the unit for baseoperation with process gases. Advanced operation with sharp DCsputtering for direct material deposition into the plasma flowstreamand/or positive biasing of the plasma to add ion energy to the substratefor texturing, nitriding and improved coating hardness can utilize anintegrated DC/DC high-voltage converter, externally-provided pulsed DCwith ground-shielded cabling for safety, inductive coupling or othervoltage application means.

As evidenced by the discussion of FIGS. 1 and 2 above, the coaxial orplanar microwave electrode structure geometry allows for centerlineprecursor material injection with microwave power delivery surrounded bya process/carrier gas flow process gas flow-stream that can also besupported by an external shield gas curtain, e.g. compressed air, drynitrogen or argon. With gas, liquid, aerosolized and micro/nanoparticleinjection, one group of precursors can be introduced into the plasmazone continuously or pulsed. Separate sputtering electrodes can beactuated.

The external shield gas prevents entrainment or entrapment of externalcontaminants, water vapor or other gases present and laminar flow isdesired. Laminar flow is not required; however, the plasma volumetricextent and plasma jet reach is influenced by the gas flow, mixing andflow boundary conditions. The process gas flow is typically dry air, drynitrogen, dry oxygen or argon gas. For some process conditions, wet airor saturated water vapor air is desired for the plasma chemistry. Theprecursor gas delivery can also be further improved with laminar flowinjection along the centerline to confine the reaction products andmaterials for coating into a specific region on the substrate fordeposition and treatment. One way for achieving laminar flowdistribution is to utilize an array of smooth capillary channels withlong L and small D to linearize gas flow. A dielectric straw bundle forelongated plasma jet propagation to minimize gas mixing and plasmaquenching. With this direct injection there is minimization of backflowthat can clog the injector (which plagues older concepts) and achievesthe advantage of material deposition localization on a target substrate.This type of arrangement can be used in the center coaxial segment aswell as the process plume region. For the external shield gas flow, athin annular channel can be used along the outer wall of the microwaveplasma applicator for isolation.

The interior of the microwave applicator forms a cylindrical cavityresonator with centerline electrode and the outer annular electrode.These surfaces may be completely coated with dielectric material or havea dielectric insert cover their surfaces, e.g. quartz or aluminaceramic. The insulator serves to resist accumulation of electrons andmaintain plasma density over large areas/lengths for higher powerefficiency. The insulation also minimizes the chance for localizedarcing encountered during off-normal events. The additional effect ofinsulation allows for pulsed bias voltages to be applied to insertedelectrodes for externally-controlled biasing, i.e. sputtering orpositive biasing.

Since the electron characteristic length at microwave frequencies isvery small the microwave plasma applicator head can be very small(cm-scale diameters) for moderate power levels (˜0.1-1 kW) that is idealfor mounting on small robotic arms and in-line processing machines.Pulse plasma generation and higher power levels into the tens of kW arealso achievable with the power density scalability of microwave plasmageneration. For higher power devices, supplemental heat transfer such aswater cooling may be required beyond the process and shield gas flow fornormal device cooling.

With direct microwave injection near the nozzle tip on the microwaveapplicator, very high specific power density is maintained to pump theplasma flow stream to multiple cm length scales downstream—this wouldallow direct plasma contact onto complex part surfaces and multimodalparts, e.g. a vehicle light weighting dissimilar material joint orcomplex 3D-printed parts. Coaxial precursor gas delivery allows outerannular shell to clean surface, then precursor flow stream coats surfaceand then opposite annual shell activates surface in one pass. The zonalflow facilitates the surface material treatment and coating properties.

Integrating solid-state microwave power amplifier components directlyonto the microwave applicator decreases cable length, losses, electricalsafety hazards and allows for local impedance matching and control.Safety increases since only low voltages are seen on the manufacturingfloor. The coaxial design allows the microwave propagation to be cut-offfrom leaving the end of the plasma source head; so, there is minimalmicrowave leakage since the generation and absorption of microwavesoccurs entirely in the unit.

On arrangement of the apparatus microwave launcher facilitates directpower injection without needing an impedance matching network tomaintain a low-cost structure. High gain 0.1-1 kW-class solid-state GaNmicrowave power amplifiers may replace conventional cavity resonatormagnetrons (e.g. microwave ovens) and planar triodes. As a result, smallpowerful amplifier circuits can be directly integrated with (or at leastplaced a short distance away from) the microwave applicator. Thisminimizes power losses and enables high-Q microwave applicator designsfor very high electric field conditions for low microwave input power.Plasma generation less than 100 W is achievable with these integratedsystem designs for very small applicators. Compared to lower-frequencyAC/RF, the microwave plasma has greater stability and operation over arange of electronegative gases and high molecular weight. Thenon-thermal cold plasma microwave source will be more stable thanconventional atmospheric RF plasma jets at higher power densities, havelower gas temperature than the continuous arc and be coaxially guidedfor very compact size.

Using all solid-state power amplifiers facilitates using frequencytuning to achieve peak forward power under reactive gas chemistries andvariable load at atmospheric pressure—similar to the frequency matchingpresented in U.S. Pat. No. 9,867,269 for microwave surface wave plasmagenerators. The physical structure of the microwave applicator isdesigned for power feed into the coaxial applicator cavity to build upelectromagnetic energy in a high-Q configuration. The hermeticfeedthrough insulator that couples the coaxial applicator cavity fromthe external microwave generator electronics is designed to adapt thetraditional 50 Ohm stripline components in the amplifier to the specificimpedance of the microwave applicator cavity. This allows high powerinput to achieve plasma breakdown and the generation of the conductiveplasma load. This new load will change the microwave applicator cavityelectromagnetic transmission properties resulting in a load impedancemismatch. A control circuit can sense change in load condition forinitial plasma strike, change in plasma load conditions, adjustment ingas flow, etc. and the control circuit can adjust the frequency ofexcitation to shift impedance to a minimum state for high-efficiencypower utilization. This eliminates traditional mechanical tuningsystems, lowers cost, improves response time and allows customization onthe fly for variable processing conditions—particularly pulsedoperation.

The frequency tuning is also important for localization of the electricfield minimum and maximum for the propagated EM wave mode. Frequencyadjustment allows for optimization of the localization of the plasma.This is important for pulsed operation, sputtering and biasapplications. Control feedback on the length of the plasma jet can beachieved via optical sensing.

Pulsed microwave energy at very high powers with a reduction in dutyfactor can achieve more with less. Higher microwave power density (i.e.1 kV at 10% duty factor vs. 100 W CW) will generate higher dissociationfractions and ionized precursors, process gas and carrier gases. This isdesirable for reactive deposition forming nitrides, oxides, carbines,borides, and fluorides which be achieved with this method. The plasmaradicals and ions will enable direct deposition and transformation ofmaterials.

Turning to FIG. 3 , a functional cross-sectional diagram is depictedthat shows several functional elements for the microwave cold plasma jetsystem for material deposition—including an optional annular shield gasflow and associated nozzle. The microwave plasma applicator 1 comprisesthe cavity resonator structure 4 formed by the outer conductor electrode10 and the inner conductor electrode 20 which can be hollow annuli fortransporting and inserting material or operating as a pass-through forother functional elements, such as the outer shield gas flow 11 throughthe laminar flow manifold 12 (e.g. nozzle). The material for theconductor is, for example, copper for high conductivity and minimizingpower loss. At microwave frequencies the electromagnetic energytransport is limited to a few skin depths, and therefore copper platedaluminum is an acceptable conductor material. Other variations arepossible depending on particular applications and circumstances. Thezonal flow system 30 streamlines the process/carrier gas flow 31 intothe coaxial resonator structure 4. The zonal flow system 30 may becomprised of an array of capillary straws over a gas plenum to generatehighly-directed streamline flow. The zonal flow system 30 may comprisemetallic, dielectric or a combination of both types of material.Microwave energy is generated by the microwave generator 2 and fed intothe microwave plasma applicator 1 through the microwave feedthrough 40that provides impedance matching capability from the solid-state poweramplifier stage 100 to the cavity resonator structure 4. Impedancematching is achieved with custom tailoring of the dielectric materialpermittivity, ratio of inner/outer conductors, graded transitions tominimize impedance discontinuities and balancing material bondingchoices. The microwave feedthrough 40 should be hermetic to separate gasflow and reaction products in the microwave plasma applicator 1 and thebasic electronic elements for the microwave generator 2. In addition tothe solid-state power amplifier 100, within the microwave generator 2there is a low-power driver and voltage-variable oscillator stageprovided in the form of the impedance measurement and microwavefrequency control 101 that is configurable to facilitate generatingcontinuous-wave or pulsed bursts of microwave energy to feed thesolid-state power amplifier 100. There is also a control and feedbackstage, in the form of the control electronics 102, that communicateswith the external world for carrying out control, monitoring andactuation functions. The control electronics 102 facilitate impedancematching via frequency control and other inputs for temperature, lightsensing, forward and reflected power and condition of the unit. Inputsinto the microwave plasma generator 2 include the DC power driving anelectronic circuitry 103 and a communications data in/out 104. Thedielectric layer 5 may be inserted freestanding or permanently bonded toeither the outer conductor electrode 10 or the inner conductor electrode20 having a coaxial arrangement, to provide electrical isolation foractive biasing or to improve plasma confinement and density. The shieldgas mass flow 15 for the laminar flow manifold (nozzle) 12, theprocess/carrier gas mass flow 35 for the zonal flow system 30 andprecursor/centerline gas feed 55 for the inner conductor electrode 20for gas delivery on the centerline. Laminar directed flow: (1) minimizesturbulent mixing that, in turn would undesirably limits plasma jet 9reach, and (2) entrains the precursor material feed along the centerlinefor injection in the plasma zone for volatilization, dissociation andionization.

Turning to FIG. 4A, a cross-sectional view is depicted of the microwaveplasma applicator 1, including the coaxially arranged outer conductorelectrode 10 and inner conductor electrode 20, microwave feedthrough 40and the zonal flow system 30 configured to inject process/carrier gas.Arrows depict the laminar flow of the process/carrier gas flow 31through the microwave plasma applicator 1. Also shown is theintermediary dielectric 50 that contains one or more channels forfeeding the precursor gas, carrier gas, sputter material and/oradditional electrodes for active biasing or pulsing into the microwaveplasma applicator 1.

FIG. 4B supplements the teachings of FIG. 4A by depicting the centerlineflow 51 in addition to the process/carrier gas flow 31 from the zonalflow system 30 configured to inject gas into the cavity resonatorstructure 4. This structure enables precise delivery of the chemicalprecursor materials injected into the microwave plasma applicator 1 fortransport to the substrate 8 to be coated (not depicted in FIG. 4B).

FIG. 4C depicts microwave electromagnetic energy 60 injection throughthe microwave feedthrough 40 into the cavity resonator structure 4 ofthe microwave plasma applicator 1. The cavity resonator structure 4supports electromagnetic propagation (e.g. TEM modes) until reaching thecutoff condition where the microwave electromagnetic energy 60 frequencywill not allow propagation in the remaining outer conductor electrode10. The electromagnetic energy 60 propagates down the length of theinner conductor electrode 20 until it encounters a cutoff condition infront of the abrupt termination of the inner conductor electrode 20,which is proximal the intermediary dielectric 50 at a centerline gasinjection location. The cutoff condition causes the electromagneticenergy to reflect and, in turn, generates the (extremely) high fieldregion 61 that is ideal for plasma generation. The design of the cavityresonator structure 4 is based on the diameters and axial lengths of theinner conductor electrode 20 and the outer conductor electrode 10, thepresence of dielectric insulating materials (such as the dielectricmaterial 5), and the material properties of the zonal flow system 30 andthe intermediary dielectric 50.

The operational frequency range for the microwave plasma applicator 1may be based on the values chosen for each construction. 915 MHz or 2.45GHz are typically chosen due to the ISM bands for industrial use atthese frequencies and the availability of cavity magnetron emissiondevices. However, with solid-state microwave power amplifierconstruction, a wider range of frequencies are accessible and availablewith typical values ranging from 500 MHz to 2.5 GHz.

FIG. 4D depicts the intense electric field region 61 at the cutofflocation and generation of the plasma generation zone 70 for breakdownand sustainment of high density electrons, ions, excited states andradicals. The microwave electromagnetic energy 60 feeds into the cutofflocation and the high field region 61 moves electrons non-thermally toionize additional electrons to bootstrap plasma.

FIG. 4E depicts the combination of the plasma generation zone 70 andcenterline flow 51. The chemical precursor materials pass through theintense electric field in the plasma generation zone 70 and aredissociated, ionized and broken into constituent materials for transportin the centerline flow 51 that is also affected by the process/carriergas flow 31 surrounding the centerline flow 51. The bulk motion of thegases will entrain metastable atoms and molecules that are excited inthe dense plasma region 70 and carried forward out of the microwaveplasma applicator 1 and towards the substrate as a plasma jet. Theproximal location of both the high field region 61 (i.e. region havingan intense electrical field) at the cutoff location and the directinjection of the centerline flow 51 and the process/carrier gas (zonal)flow 31 enhances power coupling into the materials needed for plasmachemistry and functionalization of the thin-film as well as thin-filmgrowth.

FIG. 4F depicts the application of negative DC pulsing at the firstpotential 90 on a sputtering material feedstock 53 electrode (not shown)within the intermediary dielectric 50 within the inner conductorelectrode 20 forming the cavity resonator structure 4. The intenseplasma generated in the plasma generation zone 70 generates significantpopulation of ions 71 and the application of the negative DC pulse atthe first potential 90 will attract the ions 71 that will gain energy inthe plasma sheath that forms around pulsed feedstock 53 electrode (notshown, but contained within the intermediary dielectric 50). The intensesource of ions 71 from the plasma generation zone 70 will serve as thesputtering population to remove material from the feedstock 53 electrodeand introduce copious numbers of feedstock atoms into the centerlineflow 51 for transport to the substrate to be coated. Central to theillustrative examples is the formation and source of dense, populousions 71 from the microwave-driven plasma of the plasma generation zone70 to facilitate the sputtering process without reliance on cathodespots, high-pressure arcs and filamentary microbursts to liberatematerial from the feedstock 53 source. This arrangement enables lowervoltage, lower power operation compared to cathodic arc generators,filamentary arc generators and more conventional plasma spray processeswhere thermal, molten and evaporative blobs of material are common vs.the atomistic, precise outcome from sputtering.

Turning to FIG. 4G, a depiction is provided of the physical sputteringof material off the feedstock 53 electrode (not shown, but withininsulator 50) by ions 71 from the application of pulsed −DC biasing atthe first potential 90 to generate an atom flux 75 of the feedstock 53material towards the substrate. This atom flux 75 becomes entrained inthe centerline flow 51 and is incorporated into the thin-film sourcematerial to be deposited on the substrate in a manner reminiscent ofvacuum sputter deposition. Designing the cavity resonator structure 4 toachieve cutoff condition for electromagnetic energy 60 propagation inclose proximity to the sputtering feedstock material 53 enables a veryhigh population of the ions 71 for sputtering to minimize power andvoltage requirements suitable for a small in-line microwave cold plasmajet applicator. This design promotes high sputtering rates withconsistency for in-line manufacturing. Notably, debris generation isminimal for high quality thin-film deposition. The negative DC pulse atthe first potential 90 can be applied with a Starfire Industries IMPULSE2-2 pulsed power module or similar device. For microwave plasmaapplicator 1 designs using insulating layering 5 on the inner conductorelectrode 20 and the outer conductor electrode 10 of the cavityresonator structure 4, the negative DC pulsed bias at the firstpotential 90 will accelerate electrons from the plasma generation zone70 and the cold plasma jet 9 region onto the material coating of thethin-film coating 7 deposited onto the substrate 8. The pulsed electronswill transiently heat the thin-film coating 7 and provide means forstress relief, lattice growth and ordering.

Expanding upon FIGS. 4F and 4G, the DC pulsed power module can beconfigured to supply energy to sputter a target material into the plasmaflow stream for deposition. The DC pulse onto a secondary electrode or acentral wire feed will use the ions from the microwave plasma to sputterthe material without relying on an arc for generation of the plasma. Themicrowave-generated plasma source provides the high-density ions neededfor the secondary sputtering process that will generate a burst of atomsinto the gas flow stream. The microwave plasma provides the seed plasmato start and sustain this process. The microwave plasma seed promotessputtering and not cathodic arc deposition with cathode spots, spits,splatter and debris particles that may ruin the substrate/film and thesource. The system and structures described herein permit user controlof the introduction of material into the plasma flow stream to thesubstrate. The material can be fed down the coaxial center with a singlefeed, two feeds or four feeds or even more feeds if desired. Typically,alumina insulated tubes are used to feed the material for separateinsulation and small enough diameter to minimize microwave leakage.

The plentiful ions generated by microwave plasma proximal to thematerial feed allows high-current, high-power impulse sputtering akin toHiPIMS processes used in vacuum deposition. The inventors on thisapplication have developed the Starfire Industries IMPULSE power modulefor vacuum sputtering and ionized PVD thin-film deposition. Themicrowave plasma provides the seed plasma for the sputtering process.Short, intense negative DC pulses in the range of 500-2000V, typically1000V, over durations of 1-100 usec, typically 5-10 usec at frequenciesfrom 0-100 kHz, typically 1-10 kHz. The coaxial microwave applicator canbe constructed to achieve cutoff condition directly in front of thematerial feed location for the secondary sputtering.

FIG. 4H depicts the application of a positive bias pulse at the secondpotential 91 (a.k.a. Kick Pulse) to elevate local plasma in the plasmageneration zone 70 to a positive potential with respect to the substrate8 to supply a directed ion flow/energy 72 to the substrate 8. A positivebias at the second potential 91 of 200V will raise the local plasmapotential and allow the formation of a sheath drop across the substrate8 and promote ion energy transfer to the substrate 8. This additionalion flux and energy will promote more vacuum-quality film growth whileat atmospheric pressure. Note the positive pulsed bias is not requiredon the inner conductor electrode 20 region. An inserted ring or otherelectrode can elevate plasma potential and generate transient sheathdrops around substrates.

The positive pulse bias gives some ion energy by bringing the plasmapotential positive relative to the substrate to produce a transientsheath that grants eV energy to ions energy even with atmosphericcollisions to enhance the film properties. The positive reversal islikewise short, intense and positive DC pulses are in the range of0-2000V, typically 200V, over durations of 1-100 usec, typically 50 usecat similar operating frequencies with adjustable timing delay.

FIG. 5 is an illustrative waveform depiction showing the application ofa large negative sputtering pulse at the first potential 90 that isimmediately followed by a positive kick pulse at the second potential 91to give ions energy to interact with the substrate 8. In FIG. 5 , thecurrent rise (green) shows sputtering current measured at ˜100 A for a−700V negative pulse 90. The positive +100V pulse at the secondpotential 91 is commuted across the plasma generation zone 70 and thecold plasma jet 9 to the substrate 8. Dielectric material 5 on/near thecoaxially arranged outer conductor electrode 10 and the inner conductorelectrode 20 is important for this effect to be maximized withoutintroducing sputtered material from unwanted locations.

FIG. 6A depicts the intermediary dielectric 50 inserted into the innerconductor electrode 20 in the microwave plasma applicator 1 housing atleast one of an opening 52 for sputtering material of the feedstock 53.The insulating thickness of the intermediary dielectric 50 between thefeedstock 53 (e.g., a sputtering electrode) and the inner conductorelectrode 20 is important for dielectric standoff in both DC andtransient for pulsing.

FIG. 6B depicts the intermediary dielectric 50 with large areal hole 52for both centerline flow 51 and sputtering material provided via thefeedstock 53. This arrangement allows both sputtering atomization andentrainment with a carrier gas such as argon to prevent mixing withreactive oxygen radicals present from dissociation in the dense plasmageneration region 70.

FIG. 6C depicts an example of a multi-mode form of the intermediarydielectric 50 inserted into the inner conductor electrode 20 in themicrowave applicator 1 allowing a mix of gas introduction via thecenterline flow 51 and sputtering feedstock materials via the feedstock53. This setup is multifunctional allowing multiple sputtering sourcesto be used as well as gas flow structures. This illustration is notexhaustive as there are many possible configurations to achieve thisresult. Notable, in this arrangement, is the proximity to theindependently generated microwave plasma of the plasma generation zone70 that is incredibly dense and populous with ions 71 generated from theelectric field of the high field region 61 by nature of the design.

FIG. 7 depicts a cross-sectional view of an exemplary configuration ofthe zonal flow system 30 and distribution system where the zonal flowsystem comprises an array of small-diameter capillary tubes 33 inparallel configuration, where the squares represent the cross-sectionsof the capillary tubes 33. The number of squares does not necessarilyrepresent the quantity of the capillary tubes 33. The number anddiameter of the capillary tubes 33 will vary according to requirementsof particular applications of the system described herein. The array ofcapillary tubes 33 is separated from the inner conductor electrode 20and the outer conductor electrode 10 of the cavity resonator structure4.

FIG. 8 illustratively depicts steps for surface cleaning and hybridthin-film deposition using the microwave plasma applicator and a mixtureof precursor chemistries and sputtered materials for graded coatings andbonding. In the illustrative example, a ceramic matrix compositesubstrate is first cleaned by the cold plasma jet 9 (e.g. oxygen plasmajet) generated, for example, by flowing an O₂/Ar mix through the zonalflow system 30 into the plasma formation zone 70. Radicals, ions, andargon metastables are transported in the process/carrier gas flow 31 tothe substrate 8 for surface chemical reduction and volatilization. Apositive pulse bias at the second potential 91 may be used foradditional ion etch energy to facilitate material removal from thesubstrate 8. After the cold plasma jet 9 cleaning, a chemical precursormaterial (e.g. hexamethyldisiloxane) is introduced into the centerlineflow 51. that the precursor material is broken up into constituent partsin the plasma generation zone 70 and transported in the cold plasma jet9 to the substrate 8 for deposition onto the thin—film coating 7.Additionally, reactive oxygen species bombard the substrate 8 andfacilitate a reduction of SiO2 which is incorporated into the thin film7. Pulsed positive bias pulses at the second potential 91 serve todensify the film 7, provide additional energy flux to facilitateadhesion and film quality. After a period of time the process gaschemistry may be changed by introducing a second precursor gas in thecenterline flow 51 though the intermediary dielectric 50 or via in theprocess/carrier gas flow 31. Admixtures of materials can occur in thethin-film coating 7 and compositionally grade the material for desiredeffect, including adding physical sputtering of materials for specificproperties such as yittrium for stabilization of a zirconia. Additionalmaterial combinations can occur to grade the material to its desiredproperties and layering.

Expanding upon FIG. 8 , the atmospheric cold plasma jet described hereinenables formation, on the substrate 8, of material coatings and surfacefunctionalization for corrosion protection, wear resistance and improvedbonding strength. The approach is suitable for point-of-manufacturingmaterial bonding to improve adhesive joint performance subject to harshenvironmental exposure. The described system and method of operationaddresses, in a cost-effective manner a need for a single, high-volumeproduction process that meets the requirements of multi-materialcombinations relevant to the energy-intensive transportation industry(e.g. Al-steel, Mg-steel, Al—Mg and Al-CFRP joints for body-in-whitestructures) while eliminating off-line pretreatment for Al and Mg alloysubstrates that are energy intensive, have chemical waste disposalissues, and add cost.

Cold plasma application of corrosion-resistant material coatings (e.g.silica-, silane-, alumina-, zirconia-based chemistries) formulti-material structures has the potential to vastly increase theoptimized use of carbon fiber reinforced plastics (CFRP), aluminum, Al,magnesium, Mg, and steel alloys for multi-material automotive jointssubject to harsh environmental factors, e.g. high-temperature salt waterexposure for weeks, which further supports substantial mass reductionsand significant improvements in vehicle fuel efficiency. Multi-materialstructures have complex (non-flat, deep, recessed, inverted) matingsurfaces that are optimized for weight savings and decreased part count.The microwave plasma system described herein enables preparing andapplying a coating to complex surfaces and shapes, i.e. a miniatureplasma applicator with more than 2 cm reach that can be mounted on amulti-axis robot arm.

The ability to deposit functionally-graded coatings improves corrosionresistance and improves the adhesive bonding properties to enableadvanced materials usage. The deposition process is described as plasmacleaning the surface with direct radical and plasma bombardment (pulsedpositive bias enhanced), followed with an adhesion layer and maincoating that is progressively layered and transitioned with additives,alternative chemistries or different reactive chemistries. For example,a bonding layer, followed with zirconia that is graded in transition tosilica for greater CTE matchup over the thickness to tailor stress andcomposition. A wide range of chemistries are available with gas-phaseprecursors, e.g. hexamethyledisiloxane, tetraethyloxysilane,trimethylaluminum, tetrakis(dialkylamido)zirconium, etc.

Deposition of zirconium may be interspersed with yittrium forstabilization in a reactive oxygen plasma environment. Preservation ofthe yttrium electrode could be managed with inert gas flow on thecenterline with reactive oxygen process gas for plasma formation. Theflexibility of the miniature plasma jet applicator allows in-linemanufacturing applications at significantly lower cost than conventionalbath-type coating processes with flexibility for on-the-spot processadjustment and control. The plasma-based surface layer formationtechnology described herein has the potential to vastly increase theoptimized use of advanced lightweight material for multi-materialautomotive “body-in-white” applications, resulting in substantial massreduction and significant improvement in vehicle fuel efficiency whileeliminating wet chemical steps.

Another application of the plasma-based material layer foimationtechnology described herein is the deposition of diamond-like carbon forimpact protection, wear resistance and low coefficient of friction.Diamond-like carbon (DLC) is typically formed when ionized anddecomposed carbon or hydrocarbon species land on a substrate surface.DLC films have a range of surface properties that make them idealcandidates for abrasion and wear resistance with high hardness, chemicalinertness for tough environmental conditions, and low coefficient offriction for minimal sliding contact resistance. In addition toexcellent tribological properties, DLC films also offer superior opticaland electrical properties including excellent dielectric strength.

Amorphous DLC films are typically deposited at substrate temperaturesless than 300° C. and consist of a mixture of sp2 (graphite) & sp3(diamond) phases without a dominant crystalline lattice structure. DLCcan be sorted into three categories: tetrahedral carbon (ta-C),hydrogenated amorphous carbon (a-C:H), and hydrogenated amorphous carbonwith metal (a-C:H+Me). The tetrahedral form (ta-C) has extremely highhardness (>4000 HV) and low coefficient of friction (<0.1) with minimalappreciable hydrogen content and large percentage >80% sp3 bonds.Whereas the hydrogenated form (a-C:H) can be nearly 50% hydrogen bynumber with <60% sp3 bonds resulting in medium hardness (1500-3000 HV)and higher coefficient of friction >0.20. Metal impregnated films adddimensional tolerance, stress relief and substrate integrationproperties at a further loss of DLC properties.

The ta-C film structure is the superior choice for functional materialcoating; however, it is the most difficult to achieve. Multiple methodshave been developed over the past ten years to deposit DLC coatings,i.e. ion beam deposition, high-power pulsed magnetron sputtering,plasma-enhanced chemical vapor deposition, pulsed laser ablation anddielectric-barrier discharge coating. These low-pressure vacuum chamberprocesses have had the most success since the exact geometry, materialand environmental conditions can be fixed. Starfire Industries IMPULSEpulsed power module with the positive-bias kick pulse has been shown togenerate sp3 fractions >70% and atomically smooth surfaces with 0.1 nmroughness and near-zero hydrogen content for <0.1 coefficient offriction.

The traditional limitation in film thickness due to buildup of internalcompressive stress in the coating leading to delaminating risk can beovercome with pulsed deposition. Traditional stress relief throughthermal annealing is complicated by the fact that temperatures above300° C. accelerate conversion of diamond (sp3) into graphitic (sp2)form. Higher thicknesses can be achieved with metal addition (viaprecursor or sputter delivery) and/or pulsed thermal surface treatmentto relax the compressive stress, e.g. positive kick biasing. Theatmospheric cold plasma jet described herein avoids such bulktemperatures.

Where vacuum plasma processes have an advantage is in the control ofthe: (1) ion flux density at the substrate surface to encourage sp3 bondformation, (2) ion bombarding energy for lattice densification and sp2bond breaking, and (3) thermal temperature distributions on the surfacefor stress annealing and/or CHx detachment. These factors allowtailoring the energy and matter input to the surface for formation ofta-C films. In invention described herein enables these processingproperties integrated into a non-thermal plasma deposition system.Because the plasma is electrically floating, this process can beexploited without degradation of electrodes using unipolar positivepulses and ions are accelerated into the part.

Non-thermal plasma allows chemistry and reactions to occur at high rateswithout high-temperature throughout the work piece so it is safe to useon high-grade alloys and superalloys where a high-temperature wouldaffect the bulk structure and cause a change. Atmospheric pressureoperation means DLC coating performed in a glovebox environment, i.e.less capital expense without vacuum hardware. The coating could beapplied to 3D-shaped parts through simple manipulation. A wide range ofgas-phase chemistries can be used for DLC deposition process withinexpensive and commonly available feedstock materials, e.g. methane,acetylene, helium, argon, etc. Direct physical sputtering of high-puritycarbon feedstock into the flowstream is an enabler for at-C.

FIG. 9 is an illustration of frequency tuning for impedance matchingunder variable conductivity plasma loads. The plasma and the resultantcold plasma jet 9 is a conductive material that will act like a lossypseudo-electrode for the propagation and reflection of electromagneticenergy 60 provided the critical density is above the thresholdcriterion; e.g. for 2.45 GHz it is 7.5e10 electrons/cm3. The presence ofan intense plasma pseudo-electrode 73 will partially counteract thecutoff condition of the cavity resonator structure 4 and allow theelectromagnetic energy 60 to propagate further into the microwave plasmaapplicator 1. This is desirable for higher power plasma generation andfacilitating formation of the cold plasma jet 9. However, the effectiveimpedance of the cavity resonator structure 4 will change with thepresence of the intense pseudo-electrode plasma 73 which necessitates achange in operational frequency for load matching for highest powertransfer efficiency. In this example sensing circuitry within thecontrol electronics 102 located in the microwave generator 2 detects animpedance shift and the control electronics 102 adjusts avoltage-controlled oscillator and low-power driver hardware within theimpedance measurement and microwave frequency control 101 to adjustfrequency of power fed into the solid-state power amplifier 100 togenerate a new microwave power signal 62 that is shifted from thenon-plasma or non-loaded case. The impedance can be matched withfrequency adjustments to account for changes in the plasma load,temperature, gas flow rate, proximity to substrate and power levels,including pulsed microwave deposition. This aspect of the describedexemplary system and method of operation also allows for less precisionin manufacturing the microwave plasma applicator 1 to lower cost offabricating the system.

Turning to FIG. 10 , a side cross-sectional view is depicted of amicrowave absorber material 80 located near an exit point of themicrowave plasma applicator 1 to minimize or prevent leakage of anelectromagnetic energy 63. Under extreme power conditions with very highplasma density, the pseudo electrode 73 can extend to the exit point ofthe microwave plasma applicator 1 and allow radiation of microwaveenergy into the ambient. This is an unsafe condition that can bemitigated by providing the microwave absorber material 80 along the rimof the outer conductor electrode 10 to inhibit microwave energypropagation beyond the microwave plasma applicator 1. This is a balancebetween microwave plasma generation and self-shielding.

FIG. 11A illustratively depicts the various flow regions associated withthe microwave plasma applicator 1 in operation with the cold plasma jet9 impinging on the surface of the substrate 8 that is in relativemotion. Three gas flow regions (i.e. flows 11, 31, 51) are showndelineating each zone onto the substrate. The outer shield gas flow 11provides a shield at the zone 302 that prevents contaminant materials 6from outside entraining into the process region of the zones 301 and300. The shield gas may also blow surface dust and debris away from thesurface of the substrate 8 prior to the cold plasma jet 9 reaching thatlocation as the relative motion occurs between the microwave plasmaapplicator 1 and the substrate 8. The cold plasma jet 9 will generatethe active species, e.g. ions, electrons, radicals, atoms, molecules,etc., that will impinge onto the surface of the substrate 8 and theenvelope of the plasma jet 9 extends through the centerline flow 51 andsome/all (depending on power, flow, geometry and other variables) of theprocess/carrier gas flow 31. The process/carrier gas flow 31 that isactivated by the cold plasma jet 9 will impinge on the surface of thesubstrate 8 in a cleaning or activation region indicated by the zone 301in advance of the direct thin-film deposition 7 carried out within theportion of the substrate 8 surface subject to the zone 300. Thus, in anexemplary embodiment, the thin-film deposition 7 occurs in zone 300 fromthe plasma jet action on the centerline flow 51. A plasma-activatedregion, indicated by the zone 301 trailing the passage of the depositionregion indicated by the zone 300 can serve for additional reactivechemistry and thin-film functionalization.

FIG. 11B shows a similar side cross-sectional view as FIG. 11A whichhighlights the zonal flow contained in and around the cold plasma jet 9prior to impingement on a surface of the substrate 8.

FIG. 11C further highlights/depicts the regions of the various zonalflows described herein by providing a plan view of the substrate 8impacted by the various flows (i.e. flows 11, 31 and 51) on thesubstrate 8 for a coaxial embodiment of the cavity resonator structureof the microwave plasma applicator 1. The various zones indicated inFIG. 11C show the shield gas exclusion and protection region in the zone302, then a process/carrier gas plasma activated region in the zone 301,e.g. O₂ plasma, and a centerline thin-film deposition region in the zone300. As the plasma jet 9 travels relative to the surface of thesubstrate 8, the cold plasma jet leaves the thin-film 7 behind in theregion indicated by the zone 300—after debris removal and contaminantshielding 302 and surface cleaning and activation in the zone 301. Forexample, trimethylaluminum and argon may be introduced in the centerlineflow 51, an oxygen process gas may be injected into the process/carriergas flow 31 and argon shield gas may be used in the outer shield gasflow 11. The debris is cleared, the oxygen radicals and ions clean thesubstrate, and aluminum is deposited that is subsequently reacted withoxygen for alumina coating.

FIG. 12 shows an alternative embodiment in a planar applicatorconfiguration of the microwave plasma applicator 1 for microwavecold-plasma treatment and deposition on sheets or large area versions ofthe substrate 8. Similar to earlier figures, the cold plasma jet 9 issuperimposed on a zonal flow field across a width of the substrate 8.The planar flows are serially drawn over the surface of the substrate 8such that after initial treating carried out by the outer shield gasflow 11, the system serially applies the cold plasma jet 9 within theprocess/carrier gas flow 31 and the centerline flow 51. The flows at thepoint of encountering the substrate 8 surface operate similarly to thepreviously described flows associated with the shield gas protection atthe zone 302, the cleaning and processing by the process/carrier gasflow at the zone 301 and the thin-film deposition achieved at the zone300.

FIG. 13 shows an illustration of one embodiment showing the microwave(cold) plasma applicator 1 and microwave generator 2 integrated onto amulti-axis robot arm 6 for extended treatment of substrate 8 by the coldplasma jet 9 generating the thin-film coating 7. In this embodiment thelightweight, small, and closely integrated attributes of the exemplarysystem is apparent for achieving low-cost integration with in-lineproduction hardware.

It can thus be seen that a new and useful system for generatingatmospheric-pressure plasmas for hybrid thin-film deposition and surfacemodification has been described. In view of the many possibleembodiments to which the principles of this invention may be applied, itshould be recognized that the examples described herein with respect tothe drawing figures are meant to be illustrative only and should not betaken as limiting the scope of invention. For example, those of skill inthe art will recognize that the elements of the illustrative examplesdepicted in functional blocks and depicted structures may be implementedin a wide variety of electronic circuitry and physical structures aswould be understood by those skilled in the art. Thus, the illustrativeexamples can be modified in arrangement and detail without departingfrom the spirit of the invention.

Therefore, the invention as described herein contemplates all suchembodiments as may come within the scope of the following claims andequivalents thereof.

1-19. (canceled)
 20. A system for depositing a material onto a receivingsurface, where the material is formed by use of a plasma to modify asource material in-transit to the receiving surface, the systemcomprising: a microwave generator electronics stage; a microwaveapplicator stage including a cavity resonator structure, wherein thecavity resonator structure comprises: an outer conductor, an innerconductor, and a resonator cavity interposed between the outer conductorand the inner conductor; and a multi-component flow assembly comprising:a zonal flow nozzle providing a functional process gas, and a sourcematerial flow source configured to provide a flow of the sourcematerial; wherein the source material flow source and zonal flow nozzleare physically configured to facilitate a reaction between the flow ofthe source material emitted from the source material flow source and thefunctional process gas within a plasma region generated by the microwavegenerator electronics stage and the microwave applicator stage, whereinthe plasma region comprises a plasma generation zone, wherein the plasmaregion is between an emission position of the source material flowsource and the receiving surface, and wherein the outer conductorextends beyond the inner conductor to create a high electric fieldregion at a cutoff location located within the cavity resonatorstructure, thereby enabling generating, at the plasma generation zone, aplasma proximal to an injection point of the source material, andthereby facilitating consumption of the source material.
 21. The systemof claim 20 wherein the multi-component flow assembly further comprisesa laminar flow nozzle providing a shield gas, and wherein the laminarflow nozzle is configured to emit the shield gas in a cross-sectionalpattern forming a perimeter around the functional process gas expelledfrom the zonal flow nozzle.
 22. The system of claim 21 wherein the zonalflow nozzle is configured to emit the functional process gas in across-sectional pattern forming a perimeter around the source materialexpelled from the source material flow source.
 23. The system of claim22 wherein the source material flow source has a circular cross-sectionoutlet, the zonal flow nozzle has a ring-shaped cross-section outletconcentric with the circular cross-section outlet.
 24. The system ofclaim 20 wherein the multi-component flow assembly further comprises alaminar flow nozzle providing a shield gas, and wherein the laminar flownozzle, zonal flow nozzle and the source material flow source are eachconfigured with gas flow outlets that are generally linear; and whereinthe zonal flow nozzle comprises at least two linear functional processgas flow outlets positioned to expel the functional process gas atopposite sides of the source material flow source.
 25. The system ofclaim 24 wherein the laminar flow nozzle comprises at least two linearshield gas flow outlets positioned to expel the shield gas outside theat least two linear functional process gas flow outlets.
 26. The systemof claim 21 wherein the laminar flow nozzle comprises at least twolinear shield gas flow outlets positioned to expel a shield gassurrounding a functional process gas flow of the zonal flow nozzle. 27.The system of claim 20 wherein the zonal flow nozzle comprises bundledcapillary tubes that receive the functional process gas from afunctional process gas plenum.
 28. The system of claim 20 wherein thecavity resonator structure operates in a cutoff mode to generate a highelectric field for generating, at the plasma generation zone, a plasmaproximal to a precursor injection point, thereby supplying ions thatfacilitate direct pulsed sputtering of material off a feedstockelectrode.
 29. The system of claim 20 wherein the cavity resonatorstructure is configured to generate a cold plasma jet while operating ina frequency of 500 MHz to 2.5 GHz.
 30. The system of claim 20 wherein aninsulating material is interposed between the outer conductor and theinner conductor, wherein the insulating material facilitates activebiasing, thereby facilitating sputtering using a feedstock and/orelevating an electrical potential of ions within the plasma region. 31.The system of claim 20 wherein the microwave generator electronicsoperate in a continuous wave mode of operation to drive the cavityresonator structure.
 32. The system of claim 20 wherein the microwavegenerator electronics operate in a pulsed mode of operation to drive thecavity resonator structure.
 33. The system of claim 20 wherein themicrowave generator electronics comprise solid-state amplifiers thatsupport frequency tuning that facilitates impedance matching duringoperation to maintain a desired plasma load.
 34. The system of claim 20wherein a pulsed positive bias is applied to the plasma region provideion energy to the process/carrier gas flow substrate to facilitate thetreating of the receiving surface.
 35. The system of claim 20 wherein apulsed negative bias is applied to the source material flow source toachieve sputtering of source material.
 36. The system of claim 21wherein the shield gas forms an isolation barrier between outsidecontaminants and the plasma region.
 37. The system of claim 20 whereinthe functional process gas after passing through the plasma regioncleans and functionalizes the receiving surface.
 38. The system of claim20 wherein the functional process gas, after passing through the plasmaregion, generates reactive species that alter a composition of thereceiving surface.
 39. The system of claim 20 wherein the particles ofsource material, after passing through the plasma region, areincorporated onto the receiving surface.